Renesas' 650V GaN device uses an 8x8mm dual-side-cooled package to increase power density in high-voltage data-center converters. The post Renesas Targets 800V AI Data Centers with Dual-side-cooled 650V GaN appeared first on EE Times Asia .
Renesas Targets 800V AI Data Centers with Dual-side-cooled 650V GaN
Renesas' 650V GaN device uses an 8x8mm dual-side-cooled package to increase power density in high-voltage data-center converters. The post Renesas Targets 800V AI Data Centers with Dual-side-cooled 650V GaN appeared first on EE Times Asia .
Source: EETimes-Asia