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Renesas Targets 800V AI Data Centers with Dual-side-cooled 650V GaN

Renesas' 650V GaN device uses an 8x8mm dual-side-cooled package to increase power density in high-voltage data-center converters. The post Renesas Targets 800V AI Data Centers with Dual-side-cooled 650V GaN appeared first on EE Times Asia .

October 10, 2026 | 出典

TL;DR

Renesas' 650V GaN device uses an 8x8mm dual-side-cooled package to increase power density in high-voltage data-center converters. The post Renesas Targets 800V AI Data Centers with Dual-side-cooled 650V GaN appeared first on EE Times Asia .

## Renesas Targets 800V AI Data Centers with Dual-side-cooled 650V GaN

Renesas' 650V GaN device uses an 8x8mm dual-side-cooled package to increase power density in high-voltage data-center converters. The post Renesas Targets 800V AI Data Centers with Dual-side-cooled 650V GaN appeared first on EE Times Asia .

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*Source: [EETimes-Asia](https://www.eetasia.com/renesas-targets-800v-ai-data-centers-with-dual-side-cooled-650v-gan/)*

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